Shannon, J. M.Gateru, RobertGerstner, Ed2024-11-202024-11-202002Shannon, J.M.,Gateru, Robert.,& Gerstner, Ed.(2002) Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H] Electronics Letters 38(5):249 - 250https://repository.ru.ac.ke/handle/123456789/1473It is shown that memory switching in amorphous silicon alloys is affected by ion bombardment. In particular, ion damage lowers the voltage required to form devices and switch them into the on-state. This technique enables optimised non-volatile memory devices to be made with improved switching ratios.enamorphous silicon alloysion bombardmentArticle