Browsing by Author "Gateru, Robert"

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    Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H]
    (Electronics Letters, 2002) Shannon, J. M.; Gateru, Robert; Gerstner, Ed
    It is shown that memory switching in amorphous silicon alloys is affected by ion bombardment. In particular, ion damage lowers the voltage required to form devices and switch them into the on-state. This technique enables optimised non-volatile memory devices to be made with improved switching ratios.
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    Polarity-dependent forming in ion bombarded amorphous silicon memory devices
    (Journal of Applied Physics, 2005) Gateru, Robert; Orwa, J.O; Shannon, J. M.
    Polarity-dependent forming in ion bombarded metal±semiconductor±metal (MSM) memory devices of hydrogenated amorphous silicon is reported. It is shown that prior to ion bombardment, current transport in the MSM devices is asymmetric and is controlled by the Schottky barriers at two MS junctions. Upon bombardment, however, there is a bulk component to the current and the I±V characteristics of the devices become symmetric at low bias voltages. The forming voltage in the bombarded devices shows polarity dependence. For positive bias applied on the top contact, we ®nd that devices form at the same electric ®eld independent of the thickness of the amorphous silicon while for negative voltage on the top contact, the electric ®eld needed for forming increases with the thickness. A model involving the difference in energy deposition and heat sinking for the two polarities is proposed
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    Technologizing Infrastructure for Peace in the Context of Fourth Industrial Revolution
    (Springer, Cham, 2020-07-14) Onditi, Francis; Gateru, Robert
    This chapter builds on Ayse Ceyhan’s ‘technologization of security’ thesis to suggest alternative ways of harnessing technology for peacebuilding beyond physical security. We argue that in as much as technology is key to the various dimensions of security, its current application remains overly a ‘hard security’ issue (surveillance, biometrics and military intelligence). Yet, the emerging peace and security architecture is deeply rooted in human security facets that requires multidimensional approach. Application of technology to peace and security has also been found to generate new social challenges. For example, in politically charged ethnic societies, researchers have established a significant correlation between cell phone coverage and occurrence of violence. The concern of this chapter is therefore to explore ways of harnessing the ‘constructive’ attributes of technology for peace, at the same time define the ‘negative externalities’ resulting from ‘fusion of technology’ to the infrastructure of peace (I4P) within the fourth industrial revolution (4IR) environment.