Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H]
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Date
2002
Authors
Journal Title
Journal ISSN
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Publisher
Electronics Letters
Abstract
It is shown that memory switching in amorphous silicon alloys is affected by ion bombardment. In particular, ion damage lowers the voltage required to form devices and switch them into the on-state. This technique enables optimised non-volatile memory devices to be made with improved switching ratios.
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Keywords
amorphous silicon alloys, ion bombardment
Citation
Shannon, J.M.,Gateru, Robert.,& Gerstner, Ed.(2002) Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H] Electronics Letters 38(5):249 - 250