Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H]
dc.contributor.author | Shannon, J.M | |
dc.contributor.author | Gateru, Robert | |
dc.contributor.author | Gerstner, Ed | |
dc.date.accessioned | 2024-11-20T12:44:16Z | |
dc.date.available | 2024-11-20T12:44:16Z | |
dc.date.issued | 2002 | |
dc.description.abstract | It is shown that memory switching in amorphous silicon alloys is affected by ion bombardment. In particular, ion damage lowers the voltage required to form devices and switch them into the on-state. This technique enables optimised non-volatile memory devices to be made with improved switching ratios. | |
dc.identifier.citation | Shannon, J.M.,Gateru, Robert.,& Gerstner, Ed.(2002) Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H] Electronics Letters 38(5):249 - 250 | |
dc.identifier.uri | https://repository.ru.ac.ke/handle/123456789/1473 | |
dc.language.iso | en | |
dc.publisher | Electronics Letters | |
dc.subject | amorphous silicon alloys | |
dc.subject | ion bombardment | |
dc.title | Defect dependent memory switching in amorphous silicon alloys [a-Si xC1-x:H] | |
dc.type | Article |
Files
Original bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- Defect dependent memory switching in amorphous silicon alloys .pdf
- Size:
- 113.79 KB
- Format:
- Adobe Portable Document Format
License bundle
1 - 1 of 1
No Thumbnail Available
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: