Polarity-dependent forming in ion bombarded amorphous silicon memory devices

Simple item page
dc.contributor.authorGateru, Robert
dc.contributor.authorOrwa, J.O
dc.contributor.authorShannon, J. M.
dc.date.accessioned2024-11-20T11:19:26Z
dc.date.available2024-11-20T11:19:26Z
dc.date.issued2005
dc.description.abstractPolarity-dependent forming in ion bombarded metal±semiconductor±metal (MSM) memory devices of hydrogenated amorphous silicon is reported. It is shown that prior to ion bombardment, current transport in the MSM devices is asymmetric and is controlled by the Schottky barriers at two MS junctions. Upon bombardment, however, there is a bulk component to the current and the I±V characteristics of the devices become symmetric at low bias voltages. The forming voltage in the bombarded devices shows polarity dependence. For positive bias applied on the top contact, we ®nd that devices form at the same electric ®eld independent of the thickness of the amorphous silicon while for negative voltage on the top contact, the electric ®eld needed for forming increases with the thickness. A model involving the difference in energy deposition and heat sinking for the two polarities is proposed
dc.identifier.citationGateru, R., Orwa, R. J & Shannon ,J.M (2005)Polarity-dependent forming in ion bombarded amorphous silicon memory devices. Journal of Applied Physics. 97, 024506
dc.identifier.urihttps://repository.ru.ac.ke/handle/123456789/1472
dc.language.isoen
dc.publisherJournal of Applied Physics
dc.subjectPolarity
dc.subjectsemiconductors
dc.titlePolarity-dependent forming in ion bombarded amorphous silicon memory devices
dc.typeArticle

Files

Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
Polarity-dependent forming in ion bombarded amorphous silicon memory devices..docx
Size:
12.94 KB
Format:
Microsoft Word XML
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

RU Community