Polarity-dependent forming in ion bombarded amorphous silicon memory devices
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Date
2005
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Journal of Applied Physics
Abstract
Polarity-dependent forming in ion bombarded metal±semiconductor±metal (MSM) memory devices
of hydrogenated amorphous silicon is reported. It is shown that prior to ion bombardment, current
transport in the MSM devices is asymmetric and is controlled by the Schottky barriers at two MS
junctions. Upon bombardment, however, there is a bulk component to the current and the I±V
characteristics of the devices become symmetric at low bias voltages. The forming voltage in the
bombarded devices shows polarity dependence. For positive bias applied on the top contact, we ®nd
that devices form at the same electric ®eld independent of the thickness of the amorphous silicon
while for negative voltage on the top contact, the electric ®eld needed for forming increases with the
thickness. A model involving the difference in energy deposition and heat sinking for the two
polarities is proposed
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Keywords
Polarity, semiconductors
Citation
Gateru, R., Orwa, R. J & Shannon ,J.M (2005)Polarity-dependent forming in ion bombarded amorphous silicon memory devices. Journal of Applied Physics. 97, 024506